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 JMnic
Product Specification
Silicon PNP Power Transistors
2SA1301
DESCRIPTION With TO-3PL package Complement to type 2SC3280 APPLICATIONS Power amplifier applications Recommended for 80W high fidelity audio frequency amplifier output stage
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25ae Open emitter Open base Open collector CONDITIONS VALUE -160 -160 -5 -12 -1.2 120 150 -55~150 ae ae UNIT V V V A A W
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IC=-8A ;IB=-0.8A IC=-6A ; VCE=-5V VCB=-160V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-6A ; VCE=-5V IC=-1A ; VCE=-5V f=1MHz;VCB=-10V 55 35 30 480 MIN -160 -0.9 -1.0 TYP.
2SA1301
SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB
MAX
UNIT V
-2.5 -1.5 -5 -5 160 |I |I
V V A A
MHz pF
hFE-1 classifications R 55-110 O 80-160
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1301
Fig.2 Outline dimensions (unindicated tolerance:A
0.50 mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1301
4


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